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datashee t product structure : silicon monolithic integrated circuit this product has no designed protec tion against radioactive rays . 1/32 tsz02201-0j3j0aj00610-1-2 ? 2013 rohm co., ltd. all rights reserved. 13.sep.2013 rev.001 tsz22111 ? 14 ? 001 www.rohm.com 2.7v to 5.5v input, 1a integrated mosfet single synchronous buck dc/dc converter BD9A100MUV general description BD9A100MUV is a synchronous buck switching regulator with built-in low on-resistance power mosfets. it is capable of providing current up to 1a.the sllm tm control provides excellent efficiency characteristics in light-load conditions which make the product ideal for equipment and devices that demand minimal standby power consumption. the oscillating frequency is high at 1mhz using a small value of inductance. it is a current mode control dc/dc converter and features high-speed transient response. phase compensation can also be set easily. features ? synchronous single dc/dc converter. ? sllm tm (simple light load mode) control. ? over current protection. ? short circuit protection. ? thermal shutdown protection. ? under voltage lockout protection. ? adjustable soft start function. ? power good output. ? vqfn016v3030 package (backside heat dissipation) applications ? step-down power supply for dsps, fpgas, microprocessors, etc. ? laptop pcs/ tablet pcs/ servers. ? lcd tvs. ? storage devices (hdds/ssds). ? printers, oa equipment. ? entertainment devices. ? distributed power supply, secondary power supply. key specifications ? input voltage range: 2.7v to 5.5v ? output voltage range: 0.8v to v pvin 0.7v ? average output current: 1a(max) ? switching frequency: 1mhz(typ) ? high-side mosfet on-resistance: 60m ? (typ) ? low-side mosfet on-resistance: 60m ? (typ) ? standby current: 0 a (typ) package w(typ) x d(typ) x h(max) vqfn016v3030 3.00mm x 3.00mm x 1.00mm typical application circuit figure 1. application circuit vqfn016v3030
datasheet datasheet 2/32 tsz02201-0j3j0aj00610-1-2 ? 2013 rohm co., ltd. all rights reserved. 13.sep.2013 rev.001 www.rohm.com tsz22111 ? 15 ? 001 BD9A100MUV pin configuration figure 2. pin configuration pin descriptions pin no. pin name function 1, 2 pvin power supply terminals for the switching regulator. these terminals supply power to the output stage of the switching regulator. connecting a 10f ceramic capacitor is recommended. 3, 4 pgnd ground terminals for the outpu t stage of the switching regulator. 5 agnd ground terminal for the control circuit. 6 fb an inverting input node for the gm error amplifier. see page 23 for how to calculate the resistance of the output voltage setting. 7 ith an input terminal for the gm error amplifier ou tput and the output switch current comparator. connect a frequency phase compensation component to this terminal. see page 24 for how to calculate the resistance and capacitance for phase compensation. 8 mode turning this terminal signal low (0.2v or lowe r) forces the device to operate in the fixed frequency pwm mode. turning this terminal signal high (0.8v or higher) enables the sllm control and the mode is automatic ally switched between the sllm control and fixed frequency pwm mode. 9 ss terminal for setting the soft start time. the rise time of the output volt age can be specified by connecting a capacitor to this terminal. see p age 23 for how to calculate the capacitance. 10, 11, 12 sw switch nodes. these terminals are connected to the source of the high- side mosfet and drain of the low-side mosfet. connect a bootstrap ca pacitor of 0.1f between these terminals and boot terminals. in addition, connect an inductor of 2.2h consideri ng the direct current superimposition characteristic. 13 boot connect a bootstrap capacitor of 0.1f between this terminal and sw terminals. the voltage of this capacitor is the gate drive voltage of the high-side mosfet. 14 pgd a ?power good? terminal, an open drain output. use of pull up resistor is needed. see page 18 for how to specify the resistance. when the fb terminal voltage reaches within 7% of 0.8v (typ), the internal nch mosfet turns off and the output turns high. 15 en turning this terminal signal low (0.8v or lower) forces the device to enter the shutdown mode. turning this terminal signal high (2.0v or higher) enables the device. this terminal must be terminated. 16 avin supplies power to the control circuit of the switching regulator. connecting a 0.1f ceramic capacitor is recommended. - fin a backside heat dissipation pad. connecting to t he internal pcb ground pl ane by using multiple vias provides excellent heat dissipation characteristics. ( top view ) pgnd 4 1 2 3 pvin pgnd ss 9 12 11 10 sw 13 16 15 14 5 6 7 8 agnd ith mode sw sw boot pgd en avin pvin fb fin
datasheet datasheet 3/32 tsz02201-0j3j0aj00610-1-2 ? 2013 rohm co., ltd. all rights reserved. 13.sep.2013 rev.001 www.rohm.com tsz22111 ? 15 ? 001 BD9A100MUV block diagram figure 3. block diagram current comparator gm amplifier
datasheet datasheet 4/32 tsz02201-0j3j0aj00610-1-2 ? 2013 rohm co., ltd. all rights reserved. 13.sep.2013 rev.001 www.rohm.com tsz22111 ? 15 ? 001 BD9A100MUV description of blocks 1. vref the vref block generates the internal reference voltage. 2. uvlo the uvlo block is for under voltage lockout protection. it will shut down the ic when the vin falls to 2.45v (typ) or lower. the threshold voltage has a hysteresis of 100mv (typ). 3. scp after the soft start is completed and when the feedback volt age of the output voltage has fallen below 0.4v (typ) for 1msec (typ), the scp stops the operation for 16m sec (typ) and subsequently initiates restart. 4. ovp over voltage protection function (ovp) compares fb terminal voltage with the internal standard voltage vref. when the fb terminal voltage exceeds 0.88v (typ) it turns mosfet of out put part mosfet off. after output voltage drop it returns with hysteresis. 5. tsd the tsd block is for thermal protection. the thermal prot ection circuit shuts down the device when the internal temperature of ic rises to 175 ? c (typ) or higher. thermal protection circuit resets when the temperature falls. the circuit has a hysteresis of 25c (typ). 6. soft start the soft start circuit slows down the rise of output voltag e during start-up and controls the current, which allows the prevention of output voltage overshoot and inrush current. a bu ilt-in soft start function is provided and a soft start is initiated in 1msec (typ) when the ss terminal is open. 7. gm amplifier the gm amplifier block compares the reference voltage with the feedback voltage of the ou tput voltage. the error and the ith terminal voltage determine the switching duty. a soft st art is applied at startup. the ith terminal voltage is limited by the internal slope voltage. 8. current comparator the current comparator block compares the output ith terminal voltage of the error amplifier and the slope block signal to determine the switching duty. in the event of over current, the current that flows through the high-side mosfet is limited at each cycle of the switching frequency. 9. osc this block generates the oscillating frequency. 10. driver logic this block is a dc/dc driver. a signal from current comparator is applied to drive the mosfets. 11. pgood when the fb terminal voltage reaches 0.8v (typ) within 7%, the nch mosfet of the built -in open drain output turns off and the output turns high.
datasheet datasheet 5/32 tsz02201-0j3j0aj00610-1-2 ? 2013 rohm co., ltd. all rights reserved. 13.sep.2013 rev.001 www.rohm.com tsz22111 ? 15 ? 001 BD9A100MUV absolute maximum ratings (ta = 25c) parameter symbol rating unit supply voltage v pvin, v avin -0.3 to +7 v en voltage v en -0.3 to +7 v mode voltage v mode -0.3 to +7 v pgd voltage v pgd -0.3 to +7 v voltage from gnd to boot v boot -0.3 to +14 v voltage from sw to boot Sv boot -0.3 to +7 v fb voltage v fb -0.3 to +7 v ith voltage v ith -0.3 to +7 v sw voltage v sw -0.3 to v pvin + 0.3 v allowable power dissipation (note 1) pd 2.66 w operating temperature range topr -40 to 85 c storage temperature range tstg -55 to 150 c (note 1) when mounted on a 70mm x 70mm x 1.6mm 4-layer glass epoxy board (copper foil area: 70 mm x 70 mm) derate by 21.3mw when operating above 25 ? c. caution: operating the ic over the absolute maximum ratings may damage the ic. the damage can either be a short circuit between pins or an open circuit between pins and the internal circuitry. therefore, it is important to consider circuit protection measures, such as adding a f use, in case the ic is operated over the absolute maximum ratings. recommended operating conditions (ta= -40c to +85c) parameter symbol min typ max unit supply voltage v pvin, v avin 2.7 - 5.5 v output current (note 2) i out - - 1 a output voltage range v range 0.8 - v pvin 0.7 v (note 2) pd,aso should not be exceeded.
datasheet datasheet 6/32 tsz02201-0j3j0aj00610-1-2 ? 2013 rohm co., ltd. all rights reserved. 13.sep.2013 rev.001 www.rohm.com tsz22111 ? 15 ? 001 BD9A100MUV electrical characteristics (unless otherwise specified ta = 25c, vavin = vpvin = 5v, ven = 5v) parameter symbol min typ max unit conditions avin pin standby supply current i stb - 0 10 a en= gnd operating supply current i cc - 350 500 a i out = 0ma non-switching uvlo detection voltage v uvlo1 2.35 2.45 2.55 v v in falling uvlo release voltage v uvlo2 2.425 2.55 2.7 v v in rising enable en input high level voltage v enh 0.8 1.5 2.0 v en input low hysteresis voltage v enl 100 200 300 mv en input current i en - 5 10 a en= 5v mode mode input high level voltage v modeh 0.2 0.4 0.8 v mode input current i mode - 10 20 a mode= 5v reference voltage, error amplifier fb terminal voltage v fb 0.792 0.8 0.808 v fb input current i fb - 0 1 a fb= 0.8v ith sink current i thsi 10 20 40 a fb= 0.9v soft start time t ss 0.5 1.0 2.0 ms with internal constant soft start current i ss 0.9 1.8 3.6 a switching frequency switching frequency f osc 800 1000 1200 khz power good falling (fault) voltage v pgdff 87 90 93 % fb falling v pgdff = fb/vfbx100 rising (good) voltage v pgdrg 90 93 96 % fb rising v pgdrg = fb/vfbx100 rising (fault) voltage v pgdrf 107 110 113 % fb rising v pgdrf = fb/vfbx100 falling (good) voltage v pgdfg 104 107 110 % fb falling v pgdfg =fb/vfbx100 pgd output leakage current i lkpgd - 0 5 a pgd= 5v power good on resistance r pgd - 100 200 ? power good low level voltage p gdvl - 0.1 0.2 v i pgd = 1ma switch mosfet high side fet on resistance r onh - 60 120 m ? boot ? sw= 5v low side fet on resistance r onl - 60 120 m ? high side output leakage current r ilh - 0 10 a non-switching low side output leakage current r ill - 0 10 a non-switching scp short circuit protection detection voltage v scp 0.28 0.4 0.52 v
datasheet datasheet 7/32 tsz02201-0j3j0aj00610-1-2 ? 2013 rohm co., ltd. all rights reserved. 13.sep.2013 rev.001 www.rohm.com tsz22111 ? 15 ? 001 BD9A100MUV typical performance curves figure 4. operating cu rrent vs temperature figure 5. stand-by current vs temperature figure 6. switching frequency vs temperature figure 7. fb voltage reference vs temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 -40-200 20406080 temperature[c] istb[a] v in = 2.7v v in = 5.5v 0.80 0.85 0.90 0.95 1.00 1.05 1.10 1.15 1.20 -40-200 20406080 temperature[ ] f osc [mhz] v in = 2.7v v in = 5.0v 100 200 300 400 500 600 700 800 -40-20 0 20406080 temperature[c] icc[a] v in = 5.5v v in = 2.7v 0.792 0.794 0.796 0.798 0.800 0.802 0.804 0.806 0.808 -40-200 20406080 temperature[ ] v fb [v] v in = 2.7v v in = 5.0v
datasheet datasheet 8/32 tsz02201-0j3j0aj00610-1-2 ? 2013 rohm co., ltd. all rights reserved. 13.sep.2013 rev.001 www.rohm.com tsz22111 ? 15 ? 001 BD9A100MUV typical performance curves - continued figure 8. ith sink current vs temperature fi gure 9. ith source current vs temperature figure 10. mode threshold vs temperature fi gure 11. mode input current vs temperature 10 15 20 25 30 35 40 -40-20 0 20406080 temperature[ ] isink[a] v in = 2.7v v in = 5.0v 0 2 4 6 8 10 12 14 16 18 20 -40-20 0 20406080 temperature[ ] imode[a] mode = 2.7v mode = 5.0v 0.2 0.3 0.4 0.5 0.6 0.7 0.8 -40-200 20406080 temperature[ ] vmode[a] v in = 5.0v 10 15 20 25 30 35 40 -40-20 0 20406080 temperature[ ] isource[a] v in = 2.7v v in = 5.0v
datasheet datasheet 9/32 tsz02201-0j3j0aj00610-1-2 ? 2013 rohm co., ltd. all rights reserved. 13.sep.2013 rev.001 www.rohm.com tsz22111 ? 15 ? 001 BD9A100MUV typical performance curves - continued figure 12. soft start time vs temperature figure 13. soft start terminal current vs temperature figure 14. high side fet on-resistance vs temperature figure 15. low side fet on-resistance vs temperature 0.5 1.0 1.5 2.0 2.5 3.0 -40-200 20406080 temperature[ ] i ss [a] 0.0 0.5 1.0 1.5 2.0 -40-200 20406080 temperature[ ] t ss [msec] v in = 2.7v v in = 5.0v css = open v in = 2.7v v in = 5.5v 30 40 50 60 70 80 90 100 110 120 -40-20 0 20406080 temperature[ ] r onh [m ? ] v in = 2.7v v in = 5.0v v in = 3.3v 30 40 50 60 70 80 90 100 110 120 -40-20 0 20406080 temperature[ ] r onl [m ? ] v in = 2.7v v in = 5.0v v in = 3.3v
datasheet datasheet 10/32 tsz02201-0j3j0aj00610-1-2 ? 2013 rohm co., ltd. all rights reserved. 13.sep.2013 rev.001 www.rohm.com tsz22111 ? 15 ? 001 BD9A100MUV typical performance curves - continued figure 16. pgd falling voltage vs temperature figure 17. pgd rising voltage vs temperature figure 18. pgd on-resistance vs temperature figure 19. uvlo threshold vs temperature 6 7 8 9 10 11 12 13 14 -40-200 20406080 temperature[ ] vpgdr[%] fault good v in = 5.0v -14 -13 -12 -11 -10 -9 -8 -7 -6 -40-200 20406080 temperature[ ] vpgdf[%] fault good v in = 5.0v 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 -40-200 20406080 temperature[ ] vuvlo[v] release detect 20 30 40 50 60 70 80 90 100 -40 -20 0 20 40 60 80 temperature[ ] rpgd[ ? ] v in = 2.7v v in = 5.0v
datasheet datasheet 11/32 tsz02201-0j3j0aj00610-1-2 ? 2013 rohm co., ltd. all rights reserved. 13.sep.2013 rev.001 www.rohm.com tsz22111 ? 15 ? 001 BD9A100MUV typical performance curves - continued figure 20. en threshold vs temperature fi gure 21. en input current vs temperature 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -40-200 20406080 temperature[ ] ven[v] up down 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 -40-200 20406080 temperature[ ] ien[a] en = 5.0v
datasheet datasheet 12/32 tsz02201-0j3j0aj00610-1-2 ? 2013 rohm co., ltd. all rights reserved. 13.sep.2013 rev.001 www.rohm.com tsz22111 ? 15 ? 001 BD9A100MUV 50 55 60 65 70 75 80 85 90 95 100 0 0.2 0.4 0.6 0.8 1 efficiency [%] output_current [a] 0 10 20 30 40 50 60 70 80 90 100 0.001 0.01 0.1 1 efficiency [%] output_current [a] 0 10 20 30 40 50 60 70 80 90 100 0.001 0.01 0.1 1 efficiency [%] output_current [a] typical performance curves (application) figure 22. efficiency vs load current (v in =5v, v out =1.8v, l=2.2 h) figure 23. efficiency vs load current (v in =3.3v, v out =1.8v, l=2.2 h) figure 24. efficiency vs load current (v in = 5.0v, mode = 5.0v, l=2.2 h) figure 25. closed loop response (v in =5v, v out =1.8v, l=2.2 h, c out =ceramic 44 f) -80 -60 -40 -20 0 20 40 60 80 1k 10k 100k 1m frequency[hz] gain[db] -180 -135 -90 -45 0 45 90 135 180 phase[deg] v out =3.3v v out =1.2v phase gain v in =5v v out =1.8v v out =1.8v v in =5.0v v out =1.8v mode = l mode = h v in =3.3v v out =1.8v mode = h mode = l
datasheet datasheet 13/32 tsz02201-0j3j0aj00610-1-2 ? 2013 rohm co., ltd. all rights reserved. 13.sep.2013 rev.001 www.rohm.com tsz22111 ? 15 ? 001 BD9A100MUV typical performance curves (application) - continued figure 26. power up (v in = en) figure 27. power down (v in = en) figure 28. power up (en = 0v 5v) figure 29. power down (en = 5v 0v) v in =5v/div en=5v/div v out =1v/div sw=5v/div time=1ms/div v in =5v/div en=5v/div v out =1v/div sw=5v/div time=1ms/div v in =5v/div en=5v/div v out =1v/div sw=5v/div time=1ms/div v in =5v/div en=5v/div v out =1v/div sw=5v/div time=1ms/div
datasheet datasheet 14/32 tsz02201-0j3j0aj00610-1-2 ? 2013 rohm co., ltd. all rights reserved. 13.sep.2013 rev.001 www.rohm.com tsz22111 ? 15 ? 001 BD9A100MUV typical performance curves (application) - continued figure 30. output ripple (v in = 5v, v out = 1.8v, i out = 0a) figure 31. output ripple (v in = 5v, v out = 1.8v, i out = 1a) figure 32. input ripple (v in = 5v, v out = 1.8v, i out = 0a) figure 33. input ripple (v in = 5v, v out = 1.8v, i out = 1a) v in =50mv/div sw=2v/div time=20ms/div v in =50mv/div sw=2v/div time=1s/div v out =20mv/div sw=2v/div time=2ms/div v out =20mv/div sw=2v/div time=1s/div
datasheet datasheet 15/32 tsz02201-0j3j0aj00610-1-2 ? 2013 rohm co., ltd. all rights reserved. 13.sep.2013 rev.001 www.rohm.com tsz22111 ? 15 ? 001 BD9A100MUV typical performance curves (application) - continued figure 34. switching waveform (v in = 3.3v, v out = 1.8v, i out = 1a, l=2.2h) figure 35. switching waveform (v in = 5.0v, v out = 1.8v, i out = 1a, l=2.2h) figure 36. switching waveform with sllm tm (v in = 3.3v, v out = 1.8v, i out = 30ma, l=2.2h) i l =500ma/div sw=2v/div time=10s/div sllm tm control i l =1a/div sw=2v/div time=1s/div i l =1a/div sw=2v/div time=1s/div
datasheet datasheet 16/32 tsz02201-0j3j0aj00610-1-2 ? 2013 rohm co., ltd. all rights reserved. 13.sep.2013 rev.001 www.rohm.com tsz22111 ? 15 ? 001 BD9A100MUV -0.4 -0.3 -0.2 -0.1 0 0.1 0.2 0.3 0.4 00.20.40.60.81 o u t p u t v o l t a g e d e v i a t i o n [ % ] output current [a] typical performance curves (application) - continued figure 37. line regulation vs input voltage figure 38. load regulation vs load current figure 39. load transient response i out =0a to 1a load step (v in =5v, v out =1.8v, c out =ceramic 44 f) -0.4 -0.3 -0.2 -0.1 0.0 0.1 0.2 0.3 0.4 2.5 3.0 3.5 4.0 4.5 5.0 5.5 vin input voltage[v] output voltage deviation[%] v out =50mv/div time=1ms/div i out =0.5a/div v out =1.8v v in =5.0v v out =1.8v
datasheet datasheet 17/32 tsz02201-0j3j0aj00610-1-2 ? 2013 rohm co., ltd. all rights reserved. 13.sep.2013 rev.001 www.rohm.com tsz22111 ? 15 ? 001 BD9A100MUV 1. function explanations (1) dc/dc converter operation BD9A100MUV is a synchronous rectifying step-down switching regulator that achieves faster transient response by employing current mode pwm control system. it utilizes sw itching operation in pwm (pulse width modulation) mode for heavier load, while it utilizes sllm (simple light lo ad mode) control for lighter load to improve efficiency. sw=2v/div time=5s/div v out =50mv/div sw=2v/div time=5s/div v out =50mv/div figure 41. sw waveform (sllm tm control) (v in = 5.0v, v out = 1.8v, i out = 50ma) figure 42. sw waveform (pwm control) (v in = 5.0v, v out = 1.8v, i out = 1a) sllm tm control pwm control figure 40. efficiency (sllm tm control and pwm control) pwm control efficiency [%] output current i out [a] sllm tm control
datasheet datasheet 18/32 tsz02201-0j3j0aj00610-1-2 ? 2013 rohm co., ltd. all rights reserved. 13.sep.2013 rev.001 www.rohm.com tsz22111 ? 15 ? 001 BD9A100MUV (2) enable control the ic shutdown can be controlled by the voltage applied to the en terminal. when ven reaches 2.0v (typ), the internal circuit is activated and the ic starts up. to enable shutdown control with the en terminal, the shutdown interval (low level interval of en) must be set to 100s or longer. figure 43. start up and down with enable (3) power good when the output voltage reaches outside 10% of the vo ltage setting, the open drain n-ch mosfet internally connected to the pgd terminal turns on and the pgd terminal is pulled down with an impedance of 100 ? (typ). a hysteresis of 3% applies to resetting. connecting a pull up resistor (10k ? to 100k ? ) is recommended. figure 44. pgd timing chart v out pgd -10% -7% +7% +10% v en 0 v out 0 soft start 1 msec (typ) v enh v enl en terminal output setting voltage t t
datasheet datasheet 19/32 tsz02201-0j3j0aj00610-1-2 ? 2013 rohm co., ltd. all rights reserved. 13.sep.2013 rev.001 www.rohm.com tsz22111 ? 15 ? 001 BD9A100MUV 2. protection the protective circuits are intended for prevention of damage caused by unexpected accidents. do not use them for continuous protective operation. (1) short circuit protection (scp) the short circuit protection block compares the fb terminal voltage with the internal reference voltage vref. when the fb terminal voltage has fallen below 0.4v (typ) and rema ined there for 1msec (typ), scp stops the operation for 16msec (typ) and subsequently initiates a restart. en terminal fb terminal short circuit protection short circuit protection operation 2.0v or higher 0.4v(typ) enabled on 0.4v(typ) off 0.8v or lower - disabled off figure 45. short circuit protection (scp) timing chart
datasheet datasheet 20/32 tsz02201-0j3j0aj00610-1-2 ? 2013 rohm co., ltd. all rights reserved. 13.sep.2013 rev.001 www.rohm.com tsz22111 ? 15 ? 001 BD9A100MUV (2) under voltage lockout protection (uvlo) the under voltage lockout protection circuit monitors the avin terminal voltage. the operation enters standby when the avin terminal voltage is 2.45v (typ) or lower. the operation starts when the avin terminal voltage is 2.55v (typ) or higher. figure 46. uvlo timing chart (3) thermal shutdown when the chip temperature exceeds tj = 175 ? c, the dc/dc converte r output is stopped. t he thermal shutdown circuit is intended for shutting down the ic from t hermal runaway in an abnormal state with the temperature exceeding tjmax = 150 ? c. it is not meant to protect or guarantee the soundness of t he application. do not use the function of this circuit for application protection design. (4) over current protection the over current protection function operates by using the curr ent mode control to limit the current that flows through the high-side mosfet at each cy cle of the switching frequency. the desig ned over current limit value is 2.5a (typ). (5) over voltage protection (ovp) over voltage protection function (ovp) compares fb terminal voltage with internal standard voltage vref and when fb terminal voltage exceeds 0.88v (typ) it turns mosfet of output part mosfet off. af ter output voltage drop it returns with hysteresis.
datasheet datasheet 21/32 tsz02201-0j3j0aj00610-1-2 ? 2013 rohm co., ltd. all rights reserved. 13.sep.2013 rev.001 www.rohm.com tsz22111 ? 15 ? 001 BD9A100MUV application example figure 47. application circuit table 1. recommended component values reference designator output voltage description 1.1v 1.2v 1.5v 1.8v 3.3v r3 6.8k ? 7.5k ? 9.1k ? 9.1k ? 18k ? - r5 100k ? 100k ? 100k ? 100k ? 100k ? - r7 10k ? 10k ? 16k ? 30k ? 75k ? - r8 27k ? 20k ? 18k ? 24k ? 24k ? - c2 10 f 10 f 10 f 10 f 10 f 10v, x5r, 1206 c4 0.1 f 0.1 f 0.1 f 0.1 f 0.1 f 25v, x5r, 0603 c6 2700pf 2700pf 2700pf 2700pf 2700pf - c7 0.01 f 0.01 f 0.01 f 0.01 f 0.01 f - c8 0.1 f 0.1 f 0.1 f 0.1 f 0.1 f - c9 22 f 22 f 22 f 22 f 22 f 10v, x5r, 1210 c10 22 f 22 f 22 f 22 f 22 f 10v, x5r, 1210 l1 2.2 h 2.2 h 2.2 h 2.2 h 2.2 h toko, fdsd0630
datasheet datasheet 22/32 tsz02201-0j3j0aj00610-1-2 ? 2013 rohm co., ltd. all rights reserved. 13.sep.2013 rev.001 www.rohm.com tsz22111 ? 15 ? 001 BD9A100MUV selection of components externally connected 1. output lc filter constant the dc/dc converter requires an lc filter for smoothing the output voltage in orde r to supply a continuous current to the load. BD9A100MUV is returned to the ic and il ripple current flowing through the inductor for sllm tm control. this feedback current, inductance value is the behavior of the best when the 2.2h. therefore, the inductor to use is recommended 2.2h. figure 48. waveform of current through inductor figure 49. output lc filter circuit computation with v in = 5v, v out = 1.8v, l=2.2h, and the switching frequency f osc = 1mhz, the method is as below. inductor ripple current ? i l the saturation current of the inductor must be larger than th e sum of the maximum output cu rrent and 1/2 of the inductor ripple current ? i l. the output capacitor c out affects the output ripple voltage char acteristics. the output capacitor c out must satisfy the required ripple voltage characteristics. the output ripple voltage can be repr esented by the following equation. r esr is the equivalent series resistance (esr) of the output capacitor. with c out = 44f, r esr = 10m ? the output ripple voltage is calculated as *be careful of total capacitance value, when additional capacitor c load is connected in addition to output capacitor c out . use maximum additional capacitor c load (max.) condition which satisfies the following method. maximum starting inductor ripple current i lstart can be expressed in the following method. i l t inductor saturation current > i outmax +Si l /2 i outmax average inductor current Si l [] ma 523. 6 l f v 1 v v v i os c i n ou t i n ou t l - [] v f c 8 1 r i v os c ou t es r l rp l [] mv 6.72 4 1mhz 4 4 8 1 10 m 0.523 6 v rp l amin 2. 5 limi t curren t ove r i l curren t rippl e inducto r startin g maximu m start 2 i i capacitor outpu t t o curren t charg e current i outpu t startin g maximu m i l l ca p oma x star t
datasheet datasheet 23/32 tsz02201-0j3j0aj00610-1-2 ? 2013 rohm co., ltd. all rights reserved. 13.sep.2013 rev.001 www.rohm.com tsz22111 ? 15 ? 001 BD9A100MUV charge current to output capacitor i cap can be expressed in the following method. computation with v in = 5v, v out = 3.3v, l = 2.2h, switching frequency f osc = 800khz (min.), output capacitor c out = 44f, soft start time t ss = 0.5ms (min.), load current during soft start i oss = 1a the method is as below. if the value of c load is large, and cannot meet the above equation, adjust the value of the capacitor c ss to meet the above formula. (refer to the following items (3) soft start setting equation of time t ss and soft-start value of the capacitor to be connected to the c ss .) computation with v in = 5v, v out = 3.3v, l = 2.2h, load current during soft start i oss = 1a, switching frequency f osc = 800khz (min.), output capacitor c out = 44f, v fb = 0.792v(max.), i ss = 3.6a(max.), a capacitor connected to the c ss if you want to connect the c load = 220f is the following equation. 2. output voltage setting the output voltage value can be set by the feedback resistance ratio. figure 50. feedback resistor circuit 3. soft start setting turning the en terminal signal high activates the soft start fu nction. this causes the output voltage to rise gradually while the current at startup is placed under co ntrol. this allows the prevention of output voltage overshoot and inrush current. the rise time depends on the value of the capacitor connected to the ss terminal. turning the en terminal signal high with the ss terminal op en (no capacitor connected) or with the terminal signal high causes the output voltage to rise in 1msec (typ). gm amp v out r1 r2 0.8v fb [] a s s ou t loa d ou t ca p t v c c i [] f = 134. 9 c \ v t / 2 l i \ i \ 2. 5 max c ou t ou t s s os s loa d ou t s s s s ou t f b l os s loa d c \ c i v v / 2 i\i\2. 5 max c [] nf 3.3 5 c c v / 2 i \ i \ 2. 5 i v c out loa d f b l os s s s out s s [] v 0. 8 r 2 r 2 r 1 v ou t [] [] [] [] msec a v f f with current source terminal startsoft (typ)) (0.8v voltage terminal fb ltermina timestartsoftto connected capacitor timestartsoft ) , : : : : 4.4 4 / 1. 8 0. 8 0.01 0 t 0.01c i v c t / i v c t ss ss ss fb ss ss s s f b s s s s ii hnxh
datasheet datasheet 24/32 tsz02201-0j3j0aj00610-1-2 ? 2013 rohm co., ltd. all rights reserved. 13.sep.2013 rev.001 www.rohm.com tsz22111 ? 15 ? 001 BD9A100MUV 4. phase compensation component a current mode control buck dc/dc converter is a two-pole, one-zero system. two poles are formed by an error amplifier and load and the one zero point is added by phase compensation. the phase compensation resistor r ith determines the crossover frequency f crs where the total loop gain of the dc/dc conver ter is 0db. a high value crossover frequency f crs provides a good load transient response characteristic but inferior stability. conversely, a low value crossover frequency f crs greatly stabilizes the characteristics but the l oad transient response characteristic is impaired. (1) selection of phase compensation resistor r ith the phase compensation resistance r ith can be determined by using the following equation. (2) selection of phase compensation capacitance c ith for stable operation of the dc/dc converter, zero for co mpensation cancels the phase delay due to the pole formed by the load. the phase compensation capacitance c ith can be determined by using the following equation. (3) loop stability to ensure the stability of the dc/dc converter, make sure that a sufficient phase margin is provided. a phase margin of at least 45o in the worst conditions is recommended. figure 51. phase compensation circuit figure 52. bode plot v out r up c ith ith r ith fb r dw 0.8v phase margin 180 90 180 90 0 0 a (a) gbw(b) f f gain [db] phase[deg] f crs [] (typ))/v(260 e conductanc trans amplifier error: (typ)) (13a/v gain sense current: (typ)) (0.8v voltage reference feedback: [f]e capacitanc output: [hz] frequency crossover : ][vvoltage output: ? a ) ( [] f h h l
datasheet datasheet 25/32 tsz02201-0j3j0aj00610-1-2 ? 2013 rohm co., ltd. all rights reserved. 13.sep.2013 rev.001 www.rohm.com tsz22111 ? 15 ? 001 BD9A100MUV pcb layout design in the buck dc/dc converter, a large pulse current flows into two loops. the first loop is the one into which the current flows when the high-side fet is turned on. the fl ow starts from the input capacitor c in , runs through the fet, inductor l and output capacitor c out and back to gnd of c in via gnd of c out . the second loop is the one into which the current flows when the low-side fet is turned on. the flow starts from the low-side fet, runs through the inductor l and output capacitor c out and back to gnd of the low-side fet via gnd of c out . route these two loops as thick and as short as possible to allow noise to be reduced for improved efficiency. it is recommended to connect the input and output capacitors directly to the gnd plane. the pcb layout has a great influence on the dc/dc converter in terms of all of the heat generation, noise and efficiency characteristics. accordingly, design the pcb layout considering the following points. ? connect an input capacitor as close as possible to the ic pvin terminal on the same plane as the ic. ? if there is any unused area on the pcb, provide a copper fo il plane for the gnd node to a ssist heat dissipation from the ic and the surrounding components. ? switching nodes such as sw are susceptible to noise due to ac coupling with other nodes. route the coil pattern as thick and as short as possible. ? provide lines connected to fb and ith far from the sw nodes. ? place the output capacitor away from t he input capacitor in order to avoid the effect of harmonic noise from the input. figure 53. current loop of buck dc/dc converter c in mos fet c out v out l v in v in gnd v out en gnd figure 54. example of evaluation board layout top layer bottom layer c out c in l
datasheet datasheet 26/32 tsz02201-0j3j0aj00610-1-2 ? 2013 rohm co., ltd. all rights reserved. 13.sep.2013 rev.001 www.rohm.com tsz22111 ? 15 ? 001 BD9A100MUV power dissipation when designing the pcb layout and peripheral circuitry, suffic ient consideration must be gi ven to ensure that the power dissipation is within the allowable dissipation curve. this package incorporates an exposed thermal pad. solder di rectly to the pcb ground plane. after soldering, the pcb can be used as a heatsink. the exposed thermal pad dimensions for this package are shown in page 31. figure 55. thermal derating characteristics (vqfn016v3030) 0 25 50 75 100 125 150 0 2.0 3.0 4.0 1.77w 2.66w a llowable power dissipation: pd [w] ambient temperature: ta [c]] 1.0 0.62w 0.27w (1)4-layer board (surface heat dissipation copper foil 5505mm2) (copper foil laminated on each layer) ? ja =47.0c/w (2) 4-layer board (surface heat dissipation copper foil 6.28mm 2 ) (copper foil laminated on each layer) ? ja =70.62c/w (3) 1-layer board (surface heat dissipation copper foil 6.28mm 2 ) ? ja =201.6c/w (4) ic only ? ja =462.9c/w 85
datasheet datasheet 27/32 tsz02201-0j3j0aj00610-1-2 ? 2013 rohm co., ltd. all rights reserved. 13.sep.2013 rev.001 www.rohm.com tsz22111 ? 15 ? 001 BD9A100MUV i/o equivalence circuit(s) 6. fb 7. ith 8. mode 9. ss 10.11.12. sw13. boot 14. pgd 15. en agnd mode agnd 10 10k 500k agnd pgd agnd 60 agnd en agnd agnd 10k 570k 430k
datasheet datasheet 28/32 tsz02201-0j3j0aj00610-1-2 ? 2013 rohm co., ltd. all rights reserved. 13.sep.2013 rev.001 www.rohm.com tsz22111 ? 15 ? 001 BD9A100MUV operational notes 1. reverse connection of power supply connecting the power supply in reverse polarity can damage the ic. take precautions against reverse polarity when connecting the power supply, such as mounting an external diode between the power supply and the ic?s power supply pins. 2. power supply lines design the pcb layout pattern to provide low impedance supply lines. separate the ground and supply lines of the digital and analog blocks to prevent noise in the ground and supply lines of the digital bloc k from affecting the analog block. furthermore, connect a capacitor to ground at all po wer supply pins. consider the effect of temperature and aging on the capacitance value when using electrolytic capacitors. 3. ground voltage ensure that no pins are at a voltage below that of t he ground pin at any time, even during transient condition. or 4. ground wiring pattern when using both small-signal and large-current ground traces, the two ground traces should be routed separately but connected to a single ground at the refe rence point of the application board to avoid fluctuations in the small-signal ground caused by large currents. also ensure that the ground trac es of external components do not cause variations on the ground voltage. the ground lines must be as short and thick as possible to reduce line impedance. 5. thermal consideration should by any chance the power dissipation rating be exceed ed the rise in temperature of the chip may result in deterioration of the properties of the ch ip. the absolute maximum rating of the pd stated in this specification is when the ic is mounted on a 70mm x 70mm x 1.6mm 4-layer glass epoxy board. in case of exceeding this absolute maximum rating increase the board size and c opper area to prevent exceeding the pd rating. 6. recommended operating conditions these conditions represent a range within which the expect ed characteristics of the ic can be approximately obtained. the electrical characteristics are guaranteed under the conditions of each parameter. 7. inrush current when power is first supplied to the ic, it is possible that the internal logic may be unstable and inrush current may flow instantaneously due to the internal powering sequence and delays, especially if the ic has more than one power supply. therefore, give s pecial consideration to power coupling capacitance, power wiring, width of ground wiri ng, and routing of connections. 8. operation under strong electromagnetic field operating the ic in the presence of a strong electromagnetic field may cause the ic to malfunction. 9. testing on application boards when testing the ic on an application board, connecting a capacitor directly to a low-impedance output pin may subject the ic to stress. always dischar ge capacitors completely after each process or step. the ic?s power supply should always be turned off completely before connecting or removing it from the test setup during the inspection process. to prevent damage from static discharge, ground the ic during assemb ly and use similar precautions during transport and storage. 10. inter-pin short and mounting errors ensure that the direction and position are correct when mounting the ic on the pc b. incorrect mounting may result in damaging the ic. avoid nearby pins being shorted to each other especially to ground, power supply and output pin. inter-pin shorts could be due to many reasons such as me tal particles, water droplets (in very humid environment) and unintentional solder bridge deposited in between pins during assembly to name a few.
datasheet datasheet 29/32 tsz02201-0j3j0aj00610-1-2 ? 2013 rohm co., ltd. all rights reserved. 13.sep.2013 rev.001 www.rohm.com tsz22111 ? 15 ? 001 BD9A100MUV operational notes ? continued 11. unused input pins input pins of an ic are of ten connected to the gate of a mos transistor. the gate has extremely high impedance and extremely low capacitance. if left unc onnected, the electric field from th e outside can easily charge it. the small charge acquired in this way is enough to produce a signifi cant effect on the conduction through the transistor and cause unexpected operation of the ic. so unless otherwise specified, unused in put pins should be connected to the power supply or ground line. 12. regarding the input pin of the ic this monolithic ic contains p+ isolat ion and p substrate layers between adjac ent elements in order to keep them isolated. p-n junctions are formed at the intersection of t he p layers with the n layers of other elements, creating a parasitic diode or transistor. for example (refer to figure below): when gnd > pin a and gnd > pin b, the p-n junction operates as a parasitic diode. when gnd > pin b, the p-n junction operates as a parasitic transistor. parasitic diodes inevitably occur in the structure of the ic. the operation of parasitic diodes can result in mutual interference among circuits, operational faults, or physical dam age. therefore, conditions that cause these diodes to operate, such as applying a voltage lower than the gnd voltage to an input pin (a nd thus to the p substrate) should be avoided. figure 56. example of monolithic ic structure 13. ceramic capacitor when using a ceramic capacitor, determine the dielectric constant considering the change of capacitance with temperature and the decrease in nominal capacitance due to dc bias and others. 14. area of safe operation (aso) operate the ic such that th e output voltage, output current, and power dissipation are all within the area of safe operation (aso). 15. thermal shutdown circuit(tsd) this ic has a built-in thermal shutdown circuit that pr events heat damage to the ic. normal operation should always be within the ic?s power dissipation rating. if however th e rating is exceeded for a continued period, the junction temperature (tj) will rise which will activate the tsd circui t that will turn off all output pins. when the tj falls below the tsd threshold, the circuits are autom atically restored to normal operation. note that the tsd circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no circumstances, should the tsd circuit be used in a set desi gn or for any purpose other t han protecting the ic from heat damage. 16. over current protection circuit (ocp) this ic incorporates an integrated over current protection circuit that is acti vated when the load is shorted. this protection circuit is effective in pr eventing damage due to sudden and unexpecte d incidents. however, the ic should not be used in applications characterized by continuous operation or transitioning of the protection circuit.
datasheet datasheet 30/32 tsz02201-0j3j0aj00610-1-2 ? 2013 rohm co., ltd. all rights reserved. 13.sep.2013 rev.001 www.rohm.com tsz22111 ? 15 ? 001 BD9A100MUV ordering information b d 9 a 1 0 0 m u v - e 2 part numbe r package vqfn016v3030 packaging and forming specification e2: embossed tape and reel marking diagrams vqfn016v3030 (top view) 100 part number marking lot number 1pin mark d9a
datasheet datasheet 31/32 tsz02201-0j3j0aj00610-1-2 ? 2013 rohm co., ltd. all rights reserved. 13.sep.2013 rev.001 www.rohm.com tsz22111 ? 15 ? 001 BD9A100MUV physical dimension, tape and reel information package name vqfn016v3030 ? order quantity needs to be multiple of the minimum quantity. embossed carrier tape tape quantity direction of feed the direction is the 1pin of product is at the upper left when you hold reel on the left hand and you pull out the tape on the right hand 3000pcs e2 () direction of feed reel 1pin
datasheet datasheet 32/32 tsz02201-0j3j0aj00610-1-2 ? 2013 rohm co., ltd. all rights reserved. 13.sep.2013 rev.001 www.rohm.com tsz22111 ? 15 ? 001 BD9A100MUV revision history date revision changes 13.sep.2013 001 new
datasheet d a t a s h e e t notice - ge rev.002 ? 2014 rohm co., ltd. all rights reserved. notice precaution on using rohm products 1. our products are designed and manufac tured for application in ordinary elec tronic equipments (such as av equipment, oa equipment, telecommunication equipment, home electroni c appliances, amusement equipment, etc.). if you intend to use our products in devices requiring ex tremely high reliability (such as medical equipment (note 1) , transport equipment, traffic equipment, aircraft/spacecra ft, nuclear power controllers, fuel c ontrollers, car equipment including car accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or serious damage to property (?specific applications?), please consult with the rohm sale s representative in advance. unless otherwise agreed in writing by rohm in advance, ro hm shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any ro hm?s products for specific applications. (note1) medical equipment classification of the specific applications japan usa eu china class class class b class class class 2. rohm designs and manufactures its products subject to strict quality control system. however, semiconductor products can fail or malfunction at a certain rate. please be sure to implement, at your own responsibilities, adequate safety measures including but not limited to fail-safe desi gn against the physical injury, damage to any property, which a failure or malfunction of our products may cause. the following are examples of safety measures: [a] installation of protection circuits or other protective devices to improve system safety [b] installation of redundant circuits to reduce the impact of single or multiple circuit failure 3. our products are designed and manufactured for use under standard conditions and not under any special or extraordinary environments or conditio ns, as exemplified below. accordin gly, rohm shall not be in any way responsible or liable for any damages, expenses or losses arising from the use of an y rohm?s products under any special or extraordinary environments or conditions. if you intend to use our products under any special or extraordinary environments or conditions (as exemplified bel ow), your independent verification and confirmation of product performance, reliability, etc, prior to use, must be necessary: [a] use of our products in any types of liquid, incl uding water, oils, chemicals, and organic solvents [b] use of our products outdoors or in places where the products are exposed to direct sunlight or dust [c] use of our products in places where the products ar e exposed to sea wind or corrosive gases, including cl 2 , h 2 s, nh 3 , so 2 , and no 2 [d] use of our products in places where the products are exposed to static electricity or electromagnetic waves [e] use of our products in proximity to heat-producing components, plastic cords, or other flammable items [f] sealing or coating our products with resin or other coating materials [g] use of our products without cleaning residue of flux (ev en if you use no-clean type fluxes, cleaning residue of flux is recommended); or washing our products by using water or water-soluble cleaning agents for cleaning residue after soldering [h] use of the products in places subject to dew condensation 4. the products are not subjec t to radiation-proof design. 5. please verify and confirm characteristics of the final or mounted products in using the products. 6. in particular, if a transient load (a large amount of load applied in a short per iod of time, such as pulse. is applied, confirmation of performance characteristics after on-boar d mounting is strongly recomm ended. avoid applying power exceeding normal rated power; exceeding the power rating under steady-state loading c ondition may negatively affect product performance and reliability. 7. de-rate power dissipation (pd) depending on ambient temper ature (ta). when used in seal ed area, confirm the actual ambient temperature. 8. confirm that operation temperat ure is within the specified range descr ibed in the product specification. 9. rohm shall not be in any way responsible or liable for fa ilure induced under deviant condi tion from what is defined in this document. precaution for mounting / circuit board design 1. when a highly active halogenous (chlori ne, bromine, etc.) flux is used, the resi due of flux may negatively affect product performance and reliability. 2. in principle, the reflow soldering method must be used; if flow soldering met hod is preferred, please consult with the rohm representative in advance. for details, please refer to rohm mounting specification
datasheet d a t a s h e e t notice - ge rev.002 ? 2014 rohm co., ltd. all rights reserved. precautions regarding application examples and external circuits 1. if change is made to the constant of an external circuit, pl ease allow a sufficient margin c onsidering variations of the characteristics of the products and external components, including transient characteri stics, as well as static characteristics. 2. you agree that application notes, re ference designs, and associated data and in formation contained in this document are presented only as guidance for products use. theref ore, in case you use such information, you are solely responsible for it and you must exercise your own independent verification and judgment in the use of such information contained in this document. rohm shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of such information. precaution for electrostatic this product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. please take proper caution in your manufacturing process and storage so that voltage exceeding t he products maximum rating will not be applied to products. please take special care under dry condit ion (e.g. grounding of human body / equipment / solder iron, isolation from charged objects, se tting of ionizer, friction prevention and temperature / humidity control). precaution for storage / transportation 1. product performance and soldered connections may deteriora te if the products are stor ed in the places where: [a] the products are exposed to sea winds or corros ive gases, including cl2, h2s, nh3, so2, and no2 [b] the temperature or humidity exceeds those recommended by rohm [c] the products are exposed to di rect sunshine or condensation [d] the products are exposed to high electrostatic 2. even under rohm recommended storage c ondition, solderability of products out of recommended storage time period may be degraded. it is strongly recommended to confirm sol derability before using products of which storage time is exceeding the recommended storage time period. 3. store / transport cartons in the co rrect direction, which is indicated on a carton with a symbol. otherwise bent leads may occur due to excessive stress applied when dropping of a carton. 4. use products within the specified time after opening a hum idity barrier bag. baking is required before using products of which storage time is exceeding the recommended storage time period. precaution for product label qr code printed on rohm products label is for rohm?s internal use only. precaution for disposition when disposing products please dispose them proper ly using an authorized industry waste company. precaution for foreign exchange and foreign trade act since our products might fall under cont rolled goods prescribed by the applicable foreign exchange and foreign trade act, please consult with rohm representative in case of export. precaution regarding intellectual property rights 1. all information and data including but not limited to application example contain ed in this document is for reference only. rohm does not warrant that foregoi ng information or data will not infringe any intellectual property rights or any other rights of any third party regarding such information or data. rohm shall not be in any way responsible or liable for infringement of any intellectual property rights or ot her damages arising from use of such information or data.: 2. no license, expressly or implied, is granted hereby under any intellectual property rights or other rights of rohm or any third parties with respect to the information contained in this document. other precaution 1. this document may not be reprinted or reproduced, in whol e or in part, without prior written consent of rohm. 2. the products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written consent of rohm. 3. in no event shall you use in any wa y whatsoever the products and the related technical information contained in the products or this document for any military purposes, incl uding but not limited to, the development of mass-destruction weapons. 4. the proper names of companies or products described in this document are trademarks or registered trademarks of rohm, its affiliated companies or third parties.
datasheet datasheet notice ? we rev.001 ? 2014 rohm co., ltd. all rights reserved. general precaution 1. before you use our pro ducts, you are requested to care fully read this document and fully understand its contents. rohm shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny rohms products against warning, caution or note contained in this document. 2. all information contained in this docume nt is current as of the issuing date and subj ec t to change without any prior notice. before purchasing or using rohms products, please confirm the la test information with a rohm sale s representative. 3. the information contained in this doc ument is provi ded on an as is basis and rohm does not warrant that all information contained in this document is accurate an d/or error-free. rohm shall not be in an y way responsible or liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or concerning such information.

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